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Datasheet WNM2016 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | WNM2016 | N-Channel MOSFET WNM2016
N-Channel, 20V, 3.2A, Power MOSFET
WNM2016
Http://www.willsemi.com
V(BR)DSS 20
Rds(on)
40 @ 4.5V 47 @ 2.5V 55 @ 1.8V
Descriptions
The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charg |
 Will Semiconductor |
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| 1 | WNM2016 | N-Channel Power MOSFET / Transistor Product specification
WNM2016
N-Channel, 20V, 3.2A, Power MOSFET
V(BR)DSS
Rds(on) 40 @ 4.5V
20
47 @ 2.5V 55 @ 1.8V SOT-23
Descriptions
The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS
(ON)
D 3
with low gate |
 TY Semiconductor |
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