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Datasheet WFU2N60 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | WFU2N60 | Silicon N-Channel MOSFET Features
� 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 15.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
WFU2N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanc |
Winsemi |
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2 | WFU2N60 | N-Channel MOSFET Wisdom Semiconductor
WFD/U2N60
N-Channel MOSFET
Features
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RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
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{
2. Drain
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1. Gate {
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Wisdom technologies |
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1 | WFU2N60B | Silicon N-Channel MOSFET Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
B WFU2N60 WFU2N60B
Silicon N-Channel MOSFET
Features
� � � � � 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
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Winsemi |
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