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Datasheet WFP2N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | WFP2N60 | N-Channel MOSFET HIGH VOLTAGE N-Channel MOSFET
WFP2N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 8.5nC (Typ.) □ BVDSS=600V,ID=2A □ RDS(on) : 5 Ω (Max) @VG=10V □ 100% Ava |
 Wisdom technologies |
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| 2 | WFP2N60 | Silicon N-Channel MOSFET WFP2N60
Silicon N-Channel MOSFET
Features
■ 2A,650V(Type.), RDS(on)(Max 5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 15nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s |
 WINSEMI SEMICONDUCTOR |
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| 1 | WFP2N60B | Silicon N-Channel MOSFET www.DataSheet.in
B WFP2N60 FP2N60B
Silicon N-Channel MOSFET
Features
■ 2A,600V, RDS(on)(Max 4.7Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.0nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is prod |
WINSEMI SEMICONDUCTOR |
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