Datasheet WFJ5N65B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	WFJ5N65B	Silicon N-Channel MOSFET Features � 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical13.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFJ5N65B Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advan	Winsemi

WFJ5N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
WFJ5N65B	Silicon N-Channel MOSFET Features � 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical13.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFJ5N65B Silicon N-Channel MOSFET General Description This Power MOSFET is produced u	Winsemi

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Número de pieza	Descripción	Fabricantes	PDF
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