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Datasheet WFF8N65B Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 WFF8N65B   Silicon N-Channel MOSFET

Features � 7.5A,650V,RDS(on)(Max1.3Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) WFF8N65B Silicon N-Channel MOSFET General Description This Power MOS
Winsemi
Winsemi
datasheet WFF8N65B pdf

WFF8N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
WFF8N60

Silicon N-Channel MOSFET

www.DataSheet.in WFF8N60 Silicon N-Channel MOSFET Features � � � � � � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (VISO=4000V AC) Maximum Junction Temperature Range(150℃)
WINSEMI SEMICONDUCTOR
WINSEMI SEMICONDUCTOR
datasheet pdf - WINSEMI SEMICONDUCTOR
WFF8N65L

Silicon N-Channel MOSFET

WFF8N65L Product Description Silicon N-Channel MOSFET Features � 7.5A,650V,RDS(on)(Max1.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 24nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction Temperature Range(150℃) Genera
Winsemi
Winsemi
datasheet pdf - Winsemi
WFF8N60

HIGH VOLTAGE N-Channel MOSFET

HIGH VOLTAGE N-Channel MOSFET      WFF8 N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Extended Safe Operating Area  □ Unrivalled Gate Charge :Qg= 40nC (Typ.) □ BVDSS=600V,ID=7.5A □ RDS(on) :1.32 Ω (M
Wisdom technologies
Wisdom technologies
datasheet pdf - Wisdom technologies


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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