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Datasheet WFF4N65S Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 WFF4N65S   650V Super-Junction Power MOSFET

WFF4N65S Product Description 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS compliant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low
Winsemi
Winsemi
datasheet WFF4N65S pdf

WFF4N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
WFF4N60

N-Channel MOSFET

Wisdom Semiconductor WFF4N60 N-Channel MOSFET Features ■ ■ RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain ● www.DataSheet4U.
Wisdom technologies
Wisdom technologies
datasheet pdf - Wisdom technologies
WFF4N65

N-Channel MOSFET

Wisdom Semiconductor WFF4N65 N-Channel MOSFET Features ■ RDS(on) (Max 2.7 Ω )@VGS=10V ■ Gate Charge (Typical 15nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSF
Wisdom technologies
Wisdom technologies
datasheet pdf - Wisdom technologies
WFF4N65S

650V Super-Junction Power MOSFET

WFF4N65S Product Description 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS compliant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting devi
Winsemi
Winsemi
datasheet pdf - Winsemi


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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