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Datasheet WFF4N65 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | WFF4N65 | N-Channel MOSFET Wisdom Semiconductor
WFF4N65
N-Channel MOSFET
Features
■ RDS(on) (Max 2.7 Ω )@VGS=10V ■ Gate Charge (Typical 15nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using |
Wisdom technologies |
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2 | WFF4N65L | Silicon N-Channel MOSFET WFF4N65L Product Description
Silicon N-Channel MOSFET
Features
� 4.0A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Low Crss (typical 3.62pF ) � Fast switching � 100% avalanche tested � Improved dv/dt capability � Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is p |
Winsemi |
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1 | WFF4N65S | 650V Super-Junction Power MOSFET WFF4N65S Product Description
650V Super-Junction Power MOSFET
Features
� Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS compliant
General Description
Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low |
Winsemi |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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