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Datasheet WFF12N65 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | WFF12N65 | Silicon N-Channel MOSFET www.DataSheet.in
F12N6 5 WF WFF N65
Silicon N-Channel MOSFET
Features
■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
Thi s Pow e r MO SF ET is |
 WINSEMI SEMICONDUCTOR |
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| 2 | WFF12N65L | Silicon N-Channel MOSFET WFF12N65L Product Description
Silicon N-Channel MOSFET
Features
� 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 40nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction Temperature Range(150℃)
General Description
This P |
 Winsemi |
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| 1 | WFF12N65S | Power MOSFET ( Transistor ) WFF12N65S
650V Super-Junction Power MOSFET
Features
� Ultra low Rdson � Ultra low gate charge (typ. Qg = 28nC) � 100% UIS tested � RoHS compl iant � Maximum Junction Temperature Range(150℃)
General Description
Power MOSFET is fabricated using advanced super junction technology. The resu |
Winsemi |
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