Datasheet WCD8C60S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	WCD8C60S	Silicon Controlled Rectifiers WCD8C60S Sensitive Gate Silicon Controlled Rectifiers Features � Sensitive gate trigger current:IGT=200µA maximum � Low On-State Voltage :VTM=1.2(typ.) @ ITM) � Low reverse and forward blocking current: IDRM/IRRM=1mA@TC=125℃ � Low holding current :IH=5mA maximum General Description Sensi	Winsemi

WCD8C Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
WCD8C60S	Silicon Controlled Rectifiers WCD8C60S Sensitive Gate Silicon Controlled Rectifiers Features � Sensitive gate trigger current:IGT=200µA maximum � Low On-State Voltage :VTM=1.2(typ.) @ ITM) � Low reverse and forward blocking current: IDRM/IRRM=1mA@TC=125℃ � Low holding current :IH=5mA maximum Gener	Winsemi
WCD8C60	Silicon Controlled Rectifiers Features � Repetitive Peak Off-State Voltage:600V � R.M.S On-State Current (IT(RMS)=8A) � Low On-State Voltage(1.4(Typ.)@ITM) � Isolation Voltage(VISO=1500V AC) WCD8C60 Silicon Controlled Rectifiers General Description Standard gate triggering SCR is fully isolated pack	Winsemi

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