W9NB80 Equivalent ( Datasheet, PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	W9NB80	STW9NB80 ® STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247 PowerMESH™ MOSFET TYPE STW 9NB80 s s s s s s V DSS 800 V R DS(on) <1Ω ID 9.3 A TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHA	STMicroelectronics

W9N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
W9NK90Z	STW9NK90Z STB9NK90Z - STFPNK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General features Type STB9NK90Z STW9NK90Z STP9NK90Z STF9NK90Z ■ ■ ■ VDSS 900V 900V 900V 900V RDS(on) <1.3Ω <1.3	STMicroelectronics
W9NK70Z	STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z s s s s s s s STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z VDSS 700 700 700 700 700 V V V V V RDS(on) <	STMicroelectronics
W9NK95Z	STW9NK95Z STW9NK95Z N-channel 950 V - 1.15 Ω - 7 A - TO-247 Zener-protected SuperMESHTM Power MOSFET Features Type STW9NK95Z VDSS RDS(on) Max ID 950 V < 1.38 Ω 7 A Pw 160 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized Application �	STMicroelectronics

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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