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Datasheet VS-GT100TP60N Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 VS-GT100TP60N   Half Bridge IGBT Power Module

www.vishay.com VS-GT100TP60N Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A INT-A-PAK FEATURES • Low VCE(on) trench IGBT technology • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductanc
Vishay
Vishay
datasheet VS-GT100TP60N pdf

VS-GT100TP Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
VS-GT100TP60N

Half Bridge IGBT Power Module

www.vishay.com VS-GT100TP60N Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A INT-A-PAK FEATURES • Low VCE(on) trench IGBT technology • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175
Vishay
Vishay
datasheet pdf - Vishay
VS-GT100TP120N

Half Bridge IGBT Power Module

www.vishay.com VS-GT100TP120N Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A INT-A-PAK FEATURES • Low VCE(sat) trench IGBT technology • 10 μs short circuit capability • VCE(sat) with positive temperature coefficient • Maximum junction temperature
Vishay
Vishay
datasheet pdf - Vishay


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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