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Datasheet VBT1045C Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | VBT1045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier New Product
VBT1045C
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
TO-263AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL leve |
Vishay Siliconix |
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3 | VBT1045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier New Product
VBT1045C
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
TO-263AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL leve |
Vishay |
|
2 | VBT1045CBP | Trench MOS Barrier Schottky Rectifier Rectifier www.DataSheet.co.kr
New Product
VBT1045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
TO-263AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • Hi |
Vishay |
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1 | VBT1045CBP-M3 | Trench MOS Barrier Schottky Rectifier www.vishay.com
VBT1045CBP-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
TO-263AB
K
2 1
VBT1045CBP
PIN 1
K
PIN 2
HEATSINK
FEATURES • Trench MOS Schottky technology • Low forward volta |
Vishay |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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