Datasheet V60170PW Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	V60170PW	Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com V60170PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A TMBS® FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C m	Vishay

V6017 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
V60170G-M3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com V60170G-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® TO-220AB V60170G 3 2 1 PIN 1 PIN 2 PIN 3 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Packa	Vishay
V60170PW	Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com V60170PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A TMBS® FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation •	Vishay

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Número de pieza	Descripción	Fabricantes	PDF
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