Datasheet UTD413 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	UTD413	P-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD UTD413 P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTD413 can provide excellent RDS(ON) and low gate charge by using UTC’s advanced trench technology. The UTD413 is well suited for high current load applications with the excellent thermal resistance of the TO-252	Unisonic Technologies

UTD Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
UTD36N03	N-CHANNEL ENHANCEMENT MODE Power MOSFET UNISONIC TECHNOLOGIES CO., LTD UTD36N03 N-CHANNEL ENHANCEMENT MODE  FEATURES * RDS(ON) < 17mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFOR	Unisonic Technologies
UTD484	N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD UTD484 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch	Unisonic Technologies
UTD351	N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD UTD351 N-CHANNEL ENHANCEMENT MODE Power MOSFET  DESCRIPTION As N-Channel Logic Level MOSFET, UTD351 has been optimized for battery power management applications. And it’s produced using UTC’s Trench process.  SYMBOL  ORDERING INFORMA	Unisonic Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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