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Datasheet US5U3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | US5U3 | 2.5V Drive Nch+SBD MOSFET US5U3
Transistors
2.5V Drive Nch+SBD MOSFET
US5U3
zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions (Unit : mm)
TUMT5
2.0 1.3 0.65 0.65
0.85Max. 0.77
zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) |
 ROHM Semiconductor |
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| 3 | US5U30 | Small switching US5U30
Transistor
Small switching (–20V, –1.5A)
US5U30
zFeatures 1) The US5U30 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Pch MOSFET have a low on-state resistance with a fast switching. 3) Pch MOSFET is reacted a low voltage drive(2.5V) 4) The Independently |
ROHM Semiconductor |
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| 2 | US5U35 | 4V Drive PchSBD MOSFET
US5U35
Transistor
4V Drive Pch+SBD MOSFET
US5U35
zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zFeatures 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching. 3) Built-in schottky barrier diode has low forward v |
ROHM Semiconductor |
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| 1 | US5U38 | 2.5V Drive Pch+SBD MOSFET
US5U38
Transistor
2.5V Drive Pch+SBD MOSFET
US5U38
zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions (Unit : mm)
TUMT5
2.0
zFeatures 1) The US5U38 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switchin |
ROHM Semiconductor |
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