|
|
Datasheet UPG2009TB Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | UPG2009TB | S-BAND 4W SPDT SWITCH NEC's L, S-BAND 4W SPDT SWITCH
UPG2009TB
FEATURES
• LOW INSERTION LOSS: LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
• HIGH ISOLATION: ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
• POWER HANDLING: Pin (0.1dB) = 34 dB |
CEL |
|
2 | UPG2009TB | L-BAND HIGH POWER SPDT SWITCH DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2009TB
L-BAND HIGH POWER SPDT SWITCH
DESCRIPTION The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the |
NEC |
|
1 | UPG2009TB-E3 | NECs L/ S-BAND 4W SPDT SWITCH NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH
FEATURES
• LOW INSERTION LOSS: LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz • HIGH ISOLATION: ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz • POWER HANDLING: Pin (0.1dB) = 34 dBm |
NEC |
Esta página es del resultado de búsqueda del UPG2009TB. Si pulsa el resultado de búsqueda de UPG2009TB se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |