Datasheet UPF1N50 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	UPF1N50	SURFACE MOUNT N CHANNEL MOSFET UPF1N50 W ATE R TOW N DIVISI ON SURFACE MOUNT N CHANNEL MOSFET PRELIMINARY DESCRIPTION KEY FEATURES W W W . Microsemi . COM Power MOSFET in ultra low profile patented Powermite 3(TM) package provides the designer with the best combination of fast Switching, ruggedized device design, low on-resis	Microsemi Corporation

UPF1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
UPF1060	Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS UPF1060 60W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power A	CREE
UPF1N50	SURFACE MOUNT N CHANNEL MOSFET UPF1N50 W ATE R TOW N DIVISI ON SURFACE MOUNT N CHANNEL MOSFET PRELIMINARY DESCRIPTION KEY FEATURES W W W . Microsemi . COM Power MOSFET in ultra low profile patented Powermite 3(TM) package provides the designer with the best combination of fast Switching, ruggedized device	Microsemi Corporation
UPF1N100	SURFACE MOUNT N . CHANNEL MOSFET 580 Pleasant Street Watertown, MA 02472 Phone:(617) 926-0404 F A X : (617) 924-1235 UPF1N100 • • • • • • • Features Rugged POWERMITE 3 Surface Mount Package Low On-State Resistance Avalanche and Surge Rated High Frequency Switching Ultra Low Leakage current UI	Microsemi Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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