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Datasheet UPD5702 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | UPD5702 | 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS PRELIMINARY DATA SHEET
Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT
µPD5702TU
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS
DESCRIPTION
The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1. |
 NEC |
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| 2 | UPD5702 | 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS PRELIMINARY DATA SHEET
Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT
µPD5702TU
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS
DESCRIPTION
The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1. |
NEC |
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| 1 | UPD5702 | NECs 2.4 GHz Si LD MOS POWER AMPLIFIER NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU
FEATURES
• MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz • ON CHIP OUTPUT POWER CONTROL FUNCTION • SINGLE SUPPLY VOLTAGE: VDS = 3.0 V TYP • PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm) SUITABLE FOR HIGH- DENSITY SURFACE MO |
 California Eastern Labs |
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