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Datasheet UPD444016 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | UPD444016 | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444016
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
Description
The µPD444016 is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD444016 is packaged in 44-pin plastic SOJ an |
 NEC |
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| 2 | UPD444016-Y | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444016-Y
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
Description
The µPD444016-Y is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The |
NEC |
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| 1 | UPD444016L | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444016L
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
Description
The µPD444016L is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD444016L is packaged in 44-pin plastic SOJ |
NEC |
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