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Datasheet UPD444004 Equivalent ( PDF ) |
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| 2 | UPD444004 | 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444004
4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT
Description
The µPD444004 is a high speed, low power, 4,194,304 bits (1,048,576 words by 4 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD444004 is packaged in a 32-pin PLASTIC SOJ.
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 NEC |
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| 1 | UPD444004L | 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444004L
4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT
Description
The µPD444004L is a high speed, low power, 4,194,304 bits (1,048,576 words by 4 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD444004L is packaged in a 32-pin PLASTIC SOJ |
NEC |
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