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Datasheet UPA808 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | UPA808 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD DATA SHEET
SILICON TRANSISTOR
µPA808T
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
FEATURES
• Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Packag |
 NEC |
 |
| 1 | UPA808T | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD DATA SHEET
SILICON TRANSISTOR
µPA808T
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
FEATURES
• Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Packag |
NEC |
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