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UPA2806 Price ( Datasheet, Hoja de datos )

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1 UPA2806   MOS FIELD EFFECT TRANSISTOR

Preliminary Data Sheet μ PA2806 MOS FIELD EFFECT TRANSISTOR Description R07DS0008EJ0100 Rev.1.00 June 01, 2010 The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A
Renesas
Renesas
datasheet UPA2806 pdf

UPA2 Datasheet ( Hoja de datos ) - resultados coincidentes

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UPA2003C

NPN Silicon Epitaxial Darlington Transistor Array

NEC
NEC
datasheet UPA2003C pdf
UPA2004C

(UPA2001C / UPA2002C / UPA2003C) NPN Silicon Epitaxial Darlington Transistor Array

NEC
NEC
datasheet UPA2004C pdf
UPA2451B

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2451B N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit: mm) 1 0.5±0.1 0.5±0.1 DESCRIPTION 0.25 +0.1 -0.05 The µ PA2451B is a switching device, which can be driven directly by a 2.5
NEC
NEC
datasheet UPA2451B pdf


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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