Datasheet TMU5N50G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TMU5N50G	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D-PAK TMD5N50/TMU5N50 TMD5N50G/TMU5N50G VDSS = 550 V @Tjmax ID = 4.5A RDS(ON) = 1.65 W(max) @ VGS= 10 V I-PAK D Devic	TRinno

TMU5N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TMU5N60ZG	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD5N60Z(G)/TMU5N60Z(G) BVDSS 600V N-channel MOSFET ID RDS(on)MAX 4.2A <2.1W I-PAK Device TMD5N60Z / TMU5N60Z TMD	TRinno
TMU5N60Z	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD5N60Z(G)/TMU5N60Z(G) BVDSS 600V N-channel MOSFET ID RDS(on)MAX 4.2A <2.1W I-PAK Device TMD5N60Z / TMU5N60Z TMD	TRinno
TMU5N60AZG	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD5N60AZ(G)/TMU5N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 4.2A < 2.1W I-PAK D	TRinno

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Número de pieza	Descripción	Fabricantes	PDF
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