Datasheet TMU4N65AZG Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TMU4N65AZG	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD4N65AZ(G)/TMU4N65AZ(G) BVDSS 650V N-channel MOSFET ID RDS(on) 4.0A < 2.4W I-PAK Device TMD4N65AZ / TM	TRinno

TMU4N65 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TMU4N65Z	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD4N65Z(G)/TMU4N65Z(G) BVDSS 650V N-channel MOSFET ID RDS(on) 4A <2.4W I-PAK Device TMD4N65Z / TMU4N65Z TMD4N65ZG /	TRinno
TMU4N65AZ	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD4N65AZ(G)/TMU4N65AZ(G) BVDSS 650V N-channel MOSFET ID RDS(on) 4.0A < 2.4W I-PAK D	TRinno
TMU4N65ZG	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD4N65Z(G)/TMU4N65Z(G) BVDSS 650V N-channel MOSFET ID RDS(on) 4A <2.4W I-PAK Device TMD4N65Z / TMU4N65Z TMD4N65ZG /	TRinno

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Número de pieza	Descripción	Fabricantes	PDF
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