Datasheet TMU3N50AZG Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TMU3N50AZG	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD3N50AZ(G)/TMU3N50AZ(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A < 2.8W I-PAK Device TMD3N50AZ / TM	TRinno

TMU3N50 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TMU3N50AZ	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD3N50AZ(G)/TMU3N50AZ(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A < 2.8W I-PAK D	TRinno
TMU3N50Z	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD3N50Z(G)/TMU3N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A <2.8W I-PAK Device TMD3N50Z / TMU3N50Z TMD3N5	TRinno
TMU3N50ZG	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD3N50Z(G)/TMU3N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A <2.8W I-PAK Device TMD3N50Z / TMU3N50Z TMD3N5	TRinno

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