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Datasheet TIP35C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 20 | TIP35C | TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. Complementary to TIP36C. Icmax:25A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu |
 KEC |
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| 19 | TIP35C | Complementary Silicon Power Transistors TIP35 TIP35A TIP35B TIP35C NPN TIP36 TIP36A TIP36B TIP36C PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, de |
 Central Semiconductor |
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| 18 | TIP35C | Complementary Power Transistors TIP35C, 36C
Complementary Power Transistors
Designed for use in general purpose power amplifier and switching applications.
Features:
• Collector-Emitter Sustaining Voltage VCEO(sus) = 100V (Minimum) - TIP35C, TIP36C
• DC Current Gain hFE = 25 (Minimum) at IC = 1.5A. • Current Gain-Bandwidth P |
 Multicomp |
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| 17 | TIP35C | Complementary power transistors TIP35C TIP36C
Complementary power transistors
Features
■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors
Applications
■ General purpose ■ Audio amplifier
Description
The devices are manufactured in planar technology with “base island” layout. The resulting |
 STMicroelectronics |
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