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Datasheet TIP117 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 20 | TIP117 | PNP Darlington - Connected Silicon Power Transistors |
 Texas Instruments |
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| 19 | TIP117 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
TIP117
EPITAXIAL PLANAR PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES ᴌHigh DC Current Gain.
: hFE=1000(Min.), ᷤVCE=-4V, IC=-1A. ᴌLow Collector-Emitter Saturation Voltage. ᴌComplementary to TIP112.
M |
 KEC |
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| 18 | TIP117 | PNP Epitaxial Silicon Darlington Transistors MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth
!"# $
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Features
• High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.) • Low Collector-Emitter Saturation Voltage • Complementary to TIP110/111 |
 MCC |
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| 17 | TIP117 | Power Transistors RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
See Below for
Part #
TO-220 - Power Transistors and Darlingtons
TO-220
4
12 3
Pin Config 1. Base 2. Collector 3. Emitter 4. Collector
Dimensions in millimeters
Electrical Characteristics (Ta=25oC)
Part #
Polarity VCBO VCEO VEBO (V) (V) (V)
Min Mi |
 RECTRON |
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