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Datasheet TIM1011-2L Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | TIM1011-2L | MICROWAVE POWER GaAs FET
TOSHIBA
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
MICROWAVE POWER GaAs FET
TIM1011-2L
HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz
BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIF |
Toshiba Semiconductor |
TIM1011 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
TIM1011-8L | MICROWAVE POWER GaAs FET |
Toshiba Semiconductor |
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TIM1011-5L | MICROWAVE POWER GaAs FET |
Toshiba Semiconductor |
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TIM1011-4L | MICROWAVE POWER GaAs FET |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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