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Datasheet TIC226N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | TIC226N | Triacs INCHANGE Semiconductor
isc Triacs
isc Product Specification
TIC226N
FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3)
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN UNIT
VDRM VRRM IT(RMS) ITSM
Tj Tstg Rth(j-c) Rth(j-a)
Repet |
 Inchange Semiconductor |
 |
| 4 | TIC226N | TIRISTORI TIRISTORI I TRIJACI
TIR
TRIJACI. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TIR
UDRM ITAV
IGT
Tip Cena URRM
Case
(V) (A) (mA)
BT136
1,20 600 4
20 TO220C
BT137
1,50 600 8
20 TO220C
BT138
1,80 600 12 30 TO220C
TO220C
BT139
2,00 600 16 30 TO220C
BTA04
2,50 600 4 |
 M&G Electronic |
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| 3 | TIC226N | SILICON TRIACS TIC226 SERIES SILICON TRIACS
Copyright © 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997
q q q q
8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3)
MT1 MT2 G
1 2 3 TO-220 PACKAGE (TOP VIEW)
Pin 2 is in electrical cont |
 Power Innovations Limited |
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| 2 | TIC226N | SILICON BIDIRECTIONAL TRIODE THYRISTOR SEMICONDUCTORS
TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
• • • • • • • 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) High-temperature, High-current and hig |
 Comset Semiconductor |
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