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Datasheet TIC225 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
18 TIC225   SILICON TRIACS

TIC225 SERIES SILICON TRIACS Copyright © 1997, Power Innovations Limited, UK JULY 1975 - REVISED MARCH 1997 q q q q q Sensitive Gate Triacs 8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrant 1) MT1 MT2 G 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is i
Power Innovations Limited
Power Innovations Limited
datasheet TIC225 pdf
17 TIC225A   (TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M, TIC225N, TIC225S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • Sensitive gate triacs 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1) Compliance to ROHS
Comset Semiconductors
Comset Semiconductors
datasheet TIC225A pdf
16 TIC225B   (TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M, TIC225N, TIC225S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • Sensitive gate triacs 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1) Compliance to ROHS
Comset Semiconductors
Comset Semiconductors
datasheet TIC225B pdf
15 TIC225C   (TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M, TIC225N, TIC225S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • Sensitive gate triacs 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1) Compliance to ROHS
Comset Semiconductors
Comset Semiconductors
datasheet TIC225C pdf


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Número de pieza Descripción Fabricantes PDF
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Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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