Datasheet THN6201 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	THN6201	SiGe NPN Transistor Semiconductor □ Applications LNA and wide band amplifier up to GHz range THN6201 Series SiGe NPN Transistor SOT-523 Unit in mm □ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB at f = 1	AUK

THN6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
THN6301	SiGe NPN Transistor Semiconductor □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA o High Transition Frequency fT = 10 GHz at VCE = 8 V, IC = 15 m	AUK
THN6201	SiGe NPN Transistor Semiconductor □ Applications LNA and wide band amplifier up to GHz range THN6201 Series SiGe NPN Transistor SOT-523 Unit in mm □ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MA	AUK
THN6702F	SiGe NPN Transistor Semiconductor □ Applications - VHF and UHF wide band amplifier □ Features - Medium power application (2W) - Power gain GP = 15 dB at VCE = 6.0 V, f = 460 MHz, PIN = 0 dBm Output power POUT = 33.5 dBm at VCE = 6.0 V, ICQ = 30 mA, f = 460 MHz THN6702F SiGe NPN Transistor SOT-	AUK

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Número de pieza	Descripción	Fabricantes	PDF
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