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Datasheet THN4501 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
4 THN4501   SiGe NPN Transistor

Semiconductor □ Application LNA and wide band amplifier up to GHz range THN4501 Series SOT-523 SiGe NPN Transistor Unit in mm □ FEATURES o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 12.5 dB at f = 2 GHz, VCE
AUK
AUK
datasheet THN4501 pdf
3 THN4501E   SiGe NPN Transistor

Semiconductor □ Application LNA and wide band amplifier up to GHz range THN4501 Series SOT-523 SiGe NPN Transistor Unit in mm □ FEATURES o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 12.5 dB at f = 2 GHz, VCE
AUK
AUK
datasheet THN4501E pdf
2 THN4501U   SiGe NPN Transistor

Semiconductor □ Application LNA and wide band amplifier up to GHz range THN4501 Series SOT-523 SiGe NPN Transistor Unit in mm □ FEATURES o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 12.5 dB at f = 2 GHz, VCE
AUK
AUK
datasheet THN4501U pdf
1 THN4501Z   SiGe NPN Transistor

Semiconductor □ Application LNA and wide band amplifier up to GHz range THN4501 Series SOT-523 SiGe NPN Transistor Unit in mm □ FEATURES o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 12.5 dB at f = 2 GHz, VCE
AUK
AUK
datasheet THN4501Z pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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