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Datasheet THN4201 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
4 THN4201   SiGe NPN Transistor

Semiconductor □ Application LNA and wide band amplifier up to GHz range THN4201 Series SiGe NPN Transistor SOT-523 Unit in mm □ Features o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 13.5 dB at f = 2 GHz, V
AUK
AUK
datasheet THN4201 pdf
3 THN4201E   SiGe NPN Transistor

Semiconductor □ Application LNA and wide band amplifier up to GHz range THN4201 Series SiGe NPN Transistor SOT-523 Unit in mm □ Features o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 13.5 dB at f = 2 GHz, V
AUK
AUK
datasheet THN4201E pdf
2 THN4201U   SiGe NPN Transistor

Semiconductor □ Application LNA and wide band amplifier up to GHz range THN4201 Series SiGe NPN Transistor SOT-523 Unit in mm □ Features o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 13.5 dB at f = 2 GHz, V
AUK
AUK
datasheet THN4201U pdf
1 THN4201Z   SiGe NPN Transistor

Semiconductor □ Application LNA and wide band amplifier up to GHz range THN4201 Series SiGe NPN Transistor SOT-523 Unit in mm □ Features o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 13.5 dB at f = 2 GHz, V
AUK
AUK
datasheet THN4201Z pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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