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Datasheet TGF4250 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | TGF4250 | 4.8 mm Discrete HFET T
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TGF4250-EEU
4.8 mm Discr ete HFET
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PHOTO ENLARGEMENT
4800 µm x 0.5 µm HFET Nominal Pout of 34- dBm at 8.5- GHz Nominal Gain of 8.5- dB at 8.5- GHz Nominal PAE of 53% at 8.5 - GHz Suitable for high reliability a |  TriQuint Semiconductor | data |
| 2 | TGF4250-EEU | 4.8 mm Discrete HFET T
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TGF4250-EEU
4.8 mm Discr ete HFET
q q q q q q
PHOTO ENLARGEMENT
4800 µm x 0.5 µm HFET Nominal Pout of 34- dBm at 8.5- GHz Nominal Gain of 8.5- dB at 8.5- GHz Nominal PAE of 53% at 8.5 - GHz Suitable for high reliability a | TriQuint Semiconductor | data |
| 3 | TGF4250-SCC | 4.8 mm HFET Product Data Sheet
December 16, 2002
DC - 10.5 GHz Discrete HFET
TGF4250-SCC
Key Features and Performance
• • • • • • • • • • Nominal Pout of 34 dBm at 8.5 GHz Nominal Gain of 8.5 dB at 8.5 GHz Nominal PAE of 53% at 8.5 GHz Suitable for high reliability applications 4800 µm x | TriQuint Semiconductor | data |
TGF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | TGF1350 | Discrete MESFET Product Data Sheet
Discrete MESFET
TGF1350-SCC
Key Features and Performance
• • • • • 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz All-gold Metallization for High Reliability Recessed Gate Structure
D TriQuint Semiconductor data | | |
| 2 | TGF1350-SCC | Discrete MESFET Product Data Sheet
Discrete MESFET
TGF1350-SCC
Key Features and Performance
• • • • • 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz All-gold Metallization for High Reliability Recessed Gate Structure
D TriQuint Semiconductor data | | |
| 3 | TGF2018 | 180 um Discrete GaAs pHEMT Applications
Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless
TGF2018
180 um Discrete GaAs pHEMT
Product Features
Frequency Range: DC - 20 GHz 22 dBm Typical Output Power - P1dB 14 dB Typical Gain at 12 GHz 55% Typical PAE TriQuint Semiconductor data | | |
| 4 | TGF2021-01 | DC-12 GHz Discrete Power pHEMT Advance Product Information
June 8, 2005
DC - 12 GHz Discrete power pHEMT
• • • • • • • •
TGF2021-01
Key Features and Performance
Frequency Range: DC - 12 GHz > 30 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 1mm x 0.35 m Pow TriQuint Semiconductor data | | |
| 5 | TGF2021-02 | DC - 12 GHz Discrete power pHEMT Advance Product Information
September 19, 2005
DC - 12 GHz Discrete power pHEMT
• • • • • • • •
TGF2021-02
Key Features and Performance
Frequency Range: DC - 12 GHz > 33 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 2mm x 0.35 TriQuint Semiconductor data | | |
| 6 | TGF2021-04 | DC - 12 GHz Discrete power pHEMT Advance Product Information
September 19, 2005
DC - 12 GHz Discrete power pHEMT
• • • • • • • •
TGF2021-04
Key Features and Performance
Frequency Range: DC - 12 GHz > 36 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 4mm x 0.35 TriQuint Semiconductor data | | |
| 7 | TGF2021-04-SD | DC-4 GHz Packaged Power pHEMT TGF2021-04-SD
DC-4 GHz Packaged Power pHEMT
Key Features
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Frequency Range: DC-4 GHz Package Dimensions: 4.5 x 4 x 1.5 mm Nominal 900 MHz Low Noise Application Board Performance: • OTOI: 39.5 dBm • Noise Figure: 0.6dB • Gain: 16dB • P1dB: 26.5dBm • Input Return Loss: -8 dB • Output TriQuint Semiconductor data | |
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