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Datasheet TGF2023-02 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | TGF2023-02 | 12 Watt Discrete Power GaN on SiC HEMT TGF2023-02
12 Watt Discrete Power GaN on SiC HEMT
Key Features
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Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: |
TriQuint Semiconductor |
TGF2023 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
TGF2023-2-02 | 12 Watt Discrete Power GaN on SiC HEMT |
TriQuint Semiconductor |
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TGF2023-2-10 | 50 Watt Discrete Power GaN on SiC HEMT |
TriQuint Semiconductor |
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TGF2023-2-20 | 90 Watt Discrete Power GaN on SiC HEMT |
TriQuint |
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Número de pieza | Descripción | Fabricantes | |
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