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Datasheet TC7SH08F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | TC7SH08F | 2-INPUT AND GATE TC7SH08F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH08F, TC7SH08FU
2-Input AND Gate
Features
• High speed operation : tpd = 4.3ns (typ.) at VCC = 5V, 15pF • Low power dissipation : ICC = 2 μA (max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28% VCC (min) • |
 Toshiba |
 |
| 3 | TC7SH08FE | 2-INPUT AND GATE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH08FE
TC7SH08FE
2 Input AND Gate
Features
• Super high speed operation :tPD = 4.3 ns (typ.) @VCC = 5 V
• Low power dissipation : ICC = 2 µA (Max.) @ Ta = 25°C
• High noise immunity : VNIH = VNIH = 28% VCC (Min.)
• 5.5V toler |
Toshiba |
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| 2 | TC7SH08FS | 2-INPUT AND GATE TC7SH08FS
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH08FS
2-INPUT AND GATE
Features
High speed: tpd = 4.3 ns (typ.) at VCC = 5 V Low power dissipation: ICC = 2 µA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) 5.5V tolerant input. Wide operating voltage r |
Toshiba |
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| 1 | TC7SH08FU | 2-INPUT AND GATE TC7SH08F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH08F, TC7SH08FU
2-Input AND Gate
Features
• High speed operation : tpd = 4.3ns (typ.) at VCC = 5V, 15pF • Low power dissipation : ICC = 2 μA (max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28% VCC (min) • |
Toshiba |
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