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Datasheet TC7S86F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | TC7S86F | EXCLUSIVE OR GATE TC7S86F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7S86F, TC7S86FU
EXCLUSIVE OR Gate
Features
• High Speed
: tpd = 10ns (Typ.) at VCC = 5 V
• Low power dissipation
: ICC = 1 μA (Max) at Ta = 25°C
• High noise immunity
: VNIH = VNIL = 28% VCC (Min)
• Output dri |
 Toshiba |
 |
| 1 | TC7S86FU | EXCLUSIVE OR GATE TC7S86F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7S86F, TC7S86FU
EXCLUSIVE OR Gate
Features
• High Speed
: tpd = 10ns (Typ.) at VCC = 5 V
• Low power dissipation
: ICC = 1 μA (Max) at Ta = 25°C
• High noise immunity
: VNIH = VNIL = 28% VCC (Min)
• Output dri |
Toshiba |
|
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