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Datasheet TC59SM816CFT Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | TC59SM816CFT | (TC59SM804CFT - TC59SM816CFT) SDRAM
TC59SM816/08/04CFT/CFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DY |
Toshiba |
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2 | TC59SM816CFTI | SDRAM
TC59SM816CFTI-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION
TC59SM816CFTI is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits |
Toshiba |
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1 | TC59SM816CFTL | (TC59SM804CFT - TC59SM816CFT) SDRAM
TC59SM816/08/04CFT/CFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DY |
Toshiba |
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Número de pieza | Descripción | Fabricantes | |
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