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Datasheet TC58DVM92A1FT0 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | TC58DVM92A1FT0 | 512M-Bit CMOS NAND EPROM TC58DVM92A1FTI0
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512-MBIT (64M u 8 BITS) CMOS NAND E PROM DESCRIPTION
The device is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 4096 b |
 Toshiba |
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| 1 | TC58DVM92A1FT00 | 512M-Bit CMOS NAND EPROM TC58DVM92A1FT00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512-MBIT (64M × 8 BITS) CMOS NAND E PROM DESCRIPTION
The device is a single 3.3 V 512Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 |
Toshiba |
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