Datasheet TC55VZM216AFTN08 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TC55VZM216AFTN08	16-BIT CMOS STATIC RAM TC55VZM216AJJN/AFTN08,10,12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology an	Toshiba Semiconductor

TC55VZM216AFT Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TC55VZM216AFTN12	16-BIT CMOS STATIC RAM TC55VZM216AJJN/AFTN08,10,12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated usin	Toshiba Semiconductor
TC55VZM216AFTN10	16-BIT CMOS STATIC RAM TC55VZM216AJJN/AFTN08,10,12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated usin	Toshiba Semiconductor
TC55VZM216AFTN08	16-BIT CMOS STATIC RAM TC55VZM216AJJN/AFTN08,10,12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated usin	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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