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Datasheet TC55VBM316AFTN Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | TC55VBM316AFTN | MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS TC55VBM316AFTN/ASTN40,55
TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION
The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words |
 Toshiba Semiconductor |
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TC55VBM316A Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| TC55VBM316AFTN | MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
Toshiba Semiconductor |
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