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Datasheet TC55NEM216AFTN55 Equivalent ( PDF ) |
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1 | TC55NEM216AFTN55 | (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS TC55NEM216AFTN55,70
TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION
The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshi |
Toshiba Semiconductor |
TC55NEM216AFT Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
TC55NEM216AFTN70 | (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
Toshiba Semiconductor |
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TC55NEM216AFTN55 | (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
Toshiba Semiconductor |
Esta página es del resultado de búsqueda del TC55NEM216AFTN55. Si pulsa el resultado de búsqueda de TC55NEM216AFTN55 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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