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Datasheet SW3N80C Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SW3N80C   N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET

SW3N80C N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252  High ruggedness  Low RDS(ON) (Typ 3.9Ω)@VGS=10V  Low Gate Charge (Typ 12.5nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: Industrial power，LED,Adapter 1 23 1
Samwin
Samwin		 datasheet SW3N80C pdf

SW3N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SW3N80

N-channel MOSFET

Datasheet.es SAMWIN SW3N80 N-channel MOSFET BVDSS : 800V ID : 3.0A RDS(ON) : 4.5ohm 1 2 1 3 2 2 Features ■ High ruggedness ■ RDS(ON) (Max 4.5 Ω)@VGS=10V ■ Gate Charge (Typ 26nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 3 1 1. Ga
 Samwin
Samwin		 datasheet pdf - Samwin
SW3N80C

N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET

SW3N80C N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252  High ruggedness  Low RDS(ON) (Typ 3.9Ω)@VGS=10V  Low Gate Charge (Typ 12.5nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: Industrial power，L
 Samwin
Samwin		 datasheet pdf - Samwin
SW3N80A

N-channel MOSFET

Datasheet.es SAMWIN SW3N80A N-channel MOSFET BVDSS : 800V ID : 3.0A RDS(ON) : 4.5ohm 1 2 1 1 2 3 2 3 1 3 2 Features ■ High ruggedness ■ RDS(ON) (Max 4.5 Ω)@VGS=10V ■ Gate Charge (Typ 26nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220
Samwin
Samwin		 datasheet pdf - Samwin


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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