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Datasheet STU10NB80 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 STU10NB80   N-channel Power MOSFET

STU10NB80 N - CHANNEL 800V - 0.65Ω - 10A - Max220 PowerMESH™ MOSFET PRELIMINARY DATA TYPE STU10NB80 s s s s s V DSS 800 V R DS(on) < 0.8 Ω ID 10 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARG
 STMicroelectronics
STMicroelectronics		 datasheet STU10NB80 pdf

STU10N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
STU10NB80

N-channel Power MOSFET

STU10NB80 N - CHANNEL 800V - 0.65Ω - 10A - Max220 PowerMESH™ MOSFET PRELIMINARY DATA TYPE STU10NB80 s s s s s V DSS 800 V R DS(on) < 0.8 Ω ID 10 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAP
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics
STU10NA50

N-Channel Enhancement Mode Fast Power MOS Transistor

m o .c U 4 t e STU10NA50 e h S N - CHANNEL ENHANCEMENT MODE a t FAST POWER MOS TRANSISTOR a .D w w w PRELIMINARY DATA TYPE V DSS R DS(on) ID STU10NA50 500 V < 0.6 Ω 10.2 A s s s s s s s TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED
ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
STU10NM65N

N-channel Power MOSFET

STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh™ Power MOSFET Features Type VDSS (@Tjmax) 710 V 710 V 710 V 710 V RDS(on) max < 0.48 Ω < 0.48 Ω < 0.48 Ω < 0.4
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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