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Datasheet STD16NE10L Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 STD16NE10L   N-CHANNEL POWER MOSFET

® STD16NE10L N - CHANNEL 100V - 0.07 Ω - 16A DPAK STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STD16NE10L s s s s s s s V DSS 100 V R DS(o n) < 0.10 Ω ID 16 A TYPICAL RDS(on) = 0.07 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE LOW
ST Microelectronics
ST Microelectronics		 datasheet STD16NE10L pdf

STD16NE Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
STD16NE06L-1

N-CHANNEL POWER MOSFET

® STD16NE06L-1 N - CHANNEL 60V - 0.07 Ω - 16A - TO-251 STripFET™ " POWER MOSFET PRELIMINARY DATA TYPE STD16NE06L-1 s s s s s V DSS 60 V R DS(on) < 0.085 Ω ID 16 A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATIO
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
STD16NE06L

N-CHANNEL POWER MOSFET

® STD16NE06L N - CHANNEL 60V - 0.07 Ω - 16A - DPAK STripFET™ " POWER MOSFET PRELIMINARY DATA TYPE STD16NE06L s s s s s V DSS 60 V R DS(on) < 0.085 Ω ID 16 A s TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLIC
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
STD16NE06

N-CHANNEL POWER MOSFET

® STD16NE06 N - CHANNEL 60V - 0.07Ω - 16A DPAK/IPAK STripFET™ POWER MOSFET TYPE STD16NE06 s s s s V DSS 60 V R DS(on) < 0.085 Ω ID 16 A s s TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION THROUG-HO
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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