Datasheet ST3407SRG Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	ST3407SRG	P Channel Enhancement Mode MOSFET ST3407SRG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These de	Stanson Technology

ST3407 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
ST3407SRG	P Channel Enhancement Mode MOSFET ST3407SRG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state	Stanson Technology
ST3407	P Channel Enhancement Mode MOSFET ST3407 P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to min	Stanson Technology

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Número de pieza	Descripción	Fabricantes	PDF
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