Datasheet SSP4N60B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SSP4N60B	600V N-Channel MOSFET SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,	Fairchild Semiconductor

SSP4N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SSP4N60AS	Advanced Power MOFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on)	Fairchild Semiconductor
SSP4N60	(SSP4N55 / SSP4N60) N-Channel Power MOSFET	Samsung Electronics
SSP4N80	(SSP4N70 / SSP4N80) N-Channel Power MOSFETs	Samsung Electronics

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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