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Datasheet SSP4N60AS Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | SSP4N60AS | Advanced Power MOFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.)
SSP4N60AS
BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A
T |
Fairchild Semiconductor |
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1 | SSP4N60AS | Advanced Power MOFET |
Samsung Electronics |
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Número de pieza | Descripción | Fabricantes | |
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