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SSP4N60 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
4 SSP4N60   (SSP4N55 / SSP4N60) N-Channel Power MOSFET

Samsung Electronics
Samsung Electronics
datasheet SSP4N60 pdf
3 SSP4N60AS   Advanced Power MOFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A T
Fairchild Semiconductor
Fairchild Semiconductor
datasheet SSP4N60AS pdf
2 SSP4N60AS   Advanced Power MOFET

Samsung Electronics
Samsung Electronics
datasheet SSP4N60AS pdf
1 SSP4N60B   600V N-Channel MOSFET

SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
Fairchild Semiconductor
Fairchild Semiconductor
datasheet SSP4N60B pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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