Datasheet SSM3J334R Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SSM3J334R	Power Management Switch Applications SSM3J334R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J334R ○Power Management Switch Applications 0.05　M A 0.42 -0.05 3 +0.08 Unit: mm 0.17 -0.07 +0.08 Absolute Maximum Ratings (Ta = 25°C) Characteristic S Drain-Source voltage Gate-Source voltage Drain current Po	Toshiba Semiconductor

SSM3J3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SSM3J328R	Field-Effect Transistor Silicon P-Channel MOS Type SSM3J328R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J328R ○ Power Management Switch Applications • • 1.5-V drive Low ON-resistance: RDS(ON) = 88.4mΩ RDS(ON) = 56.0mΩ RDS(ON) = 39.7mΩ RDS(ON) = 29.8mΩ (max) (@VGS = -1.5 V) (max) (@VGS = -	Toshiba Semiconductor
SSM3J332R	Field Effect Transistor SSM3J332R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J332R ○Power Management Switch Applications • • 1.8-V drive Low ON-resistance: RDS(ON) = RDS(ON) = RDS(ON) = RDS(ON) = 0.05　M A 0.42 -0.05 3 +0.08 Unit: mm 0.17 -0.07 +0.08 144 mΩ (max	Toshiba Semiconductor
SSM3J334R	Power Management Switch Applications SSM3J334R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J334R ○Power Management Switch Applications 0.05　M A 0.42 -0.05 3 +0.08 Unit: mm 0.17 -0.07 +0.08 Absolute Maximum Ratings (Ta = 25°C) Characteristic S Drain-Source voltage Gate-Source volt	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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